The rapid photoinduced charge carrier recombination hinders the photocatalytic efficiency of binary zinc sulfide (ZS) photocatalysts. Enhanced charge separation by the electronic and band structure modification via metal cation doping has gained much attentions. Herein, Auminum (Al) doping with Pt single atom (SA) into single crystalline ZnS nanodiscs (Pt-AZS) with shallow defects states is reported. The Rietveld refinement of XRD showed lattice expansion with modulated electronic distribution while the additional electron traps improved the lifetime of charge carriers to enhance its interfacial transport to metal cocatalyst, which is confirmed by in-situ XPS and time-resolved photoluminescence spectroscopy. The 2.5wt.% Pt loading on AZS (200) facet exhibits an enhanced H2 evolution rate of 17.1 mmol g-1 h-1 under AM1.5G irradiation with an apparent quantum yield (AQY) of 34% at 345 nm using a WB40 filter. By implementing UV light irradiation, Pt-AZS showed great H2 generation rate of 38 mmol g-1 h-1 , which is two times more than the bare Pt-ZS. This work elucidates efficacy of Al doping with Pt SA in a single crystalline photocatalyst to facilitate electron transport via suppressed band-bending at Mott-Schottky interface, intended to boost up the photocatalytic H2 production.