In this article, performance analysis of gate-all-around negative capacitance vertical tunnel FET (GAA-NC-VTFET) is proposed. The device creates a heterojunction design with negative capacitance HfO 2 (NC-HfO 2), and the presented structure is analyzed for the reduce of various short channel effect for minimal power applications. Because of the negative capacitance effect, the presented device shows steeper characteristics and is designed to lower the leakage current while maintaining a high I ON/I OFF ratio. The polarization effect of negative capacitance has provided better outcomes in terms of lower point subthreshold slope (SS) of 18 mV/dec and leakage current of the order of 10 -14 A/µm. An enhanced I ON / I OFF ratio of around 10 10 has been attained having a length of channel of 18 nm. Since I OFF value of the gadget is low, its power consumption is about µW, making it acceptable for low power applications.