A low-cost high-responsivity design of Si/SiGe Heterojunction Bipolar Phototransistor (HPT) built in an industrial 55nm-BiCMOS technology is integrated in a cascode configuration with a bipolar bipolar transistor (HBT) to be used for microwave-photonic communication receivers. Performances of both the cascode pair and the single Heterojunction Bipolar Phototransistor are compared. At high-frequency, the cascode circuit has better performances than the single HPT stage. At 850-nm wavelength, the pair can reach a low-frequency responsivity a low-frequency responsivity of 3.24 A/W and a bandwidth of 0.69 GHz when coupling losses are corrected.