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Input-Output Waveform Engineered Inverse Class F Power Amplifiers With High-Efficiency
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  • Zheming Zhu,
  • Zhiqun Cheng,
  • Minshi Jia,
  • Kun Wang,
  • Bingxin Li,
  • Zhenghao Yang,
  • Baoquan Zhong
Zheming Zhu
Hangzhou Dianzi University Department of Electronic Information Engineering
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Zhiqun Cheng
Hangzhou Dianzi University Department of Electronic Information Engineering
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Minshi Jia
Hangzhou Dianzi University Department of Electronic Information Engineering

Corresponding Author:minshi@hdu.edu.cn

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Kun Wang
Hangzhou Dianzi University Department of Electronic Information Engineering
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Bingxin Li
Hangzhou Dianzi University Department of Electronic Information Engineering
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Zhenghao Yang
Nanjing University of Information Science and Technology
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Baoquan Zhong
Hangzhou Dianzi University Department of Electronic Information Engineering
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Abstract

This paper studies the influence of the gate voltage of the power amplifier (PA) on the drain current and efficiency. This study proposes a theory of controlling input non-linearity to improve the efficiency of PAs. The theoretical efficiency of the inverse Class F PA which controlling input non-linearity is from 77 to 97%. A new design method for the inverse Class F PA that reconstructs the design of the load admittance space into a region instead of a point. To verify the validity of the proposed theory, a inverse Class F PA is designed and fabricated using a commercial 10W GaN high electron mobility transistor (HEMT). Results of the measurement show a high drain efficiency (DE) of 78.5%, a output power of 41.6 dBm and a large signal gain of 12.1 dB at 1.5 GHz. The overall PA’s size is controlled at 80*50 m m 2 .
Submitted to International Journal of Circuit Theory and Applications
26 May 2024Submission Checks Completed
26 May 2024Assigned to Editor
26 May 2024Review(s) Completed, Editorial Evaluation Pending
05 Jul 2024Assigned to Editor
05 Jul 2024Submission Checks Completed
05 Jul 2024Review(s) Completed, Editorial Evaluation Pending
31 Jul 2024Editorial Decision: Accept