Perovskite technology has been advancing at unprecedented levels in the last years, with efficiencies reaching up to 25.7%. State of art results are obtained on a very small area scale (<0.1cm2), by adopting high materials wasting processes not compatible with industry and with market exploitation. Silicon is a well-established technology and one of the advantages of Perovskite is its ability to pair with Silicon forming a tandem device that extracts charges reducing transmission and thermalization losses. In this work, we focus on finding a strategy to fabricate 15.2x15.2 cm2 Perovskite modules by avoiding any spin coating deposition and by adopting a green solvent cleaning step. Furthermore, we optimize the ITO top electrode deposition by adjusting sputtering process and buffer layer deposition; finally, we focused on light management by applying an antireflective coating. We obtained a semi-transparent and a tandem Silicon-Perovskite module in 4T configuration on 225cm2 (4T configuration) with 13.18% and 20.99% efficiency, respectively, passing ISOS-L1 (under continuous light soaking in air) test with a remarkable T80 of 1459hÂ