The development of OLED displays is a non-ergodic process in which there is continuous novel change; and comprehending emitters that are evolving requires new theory, or at least modification of that which is already possessed.  For the first time, a new data-validated closed-form physics-based expression is derived for the I-V characteristics of OLEDs in this paper. Two parameters emerge from the new model: liminal current and liminal voltage.  Both parameters are expressed in terms of device and material parameters, allowing a device engineer to intuitively design experiments to target low voltage operation OLEDs.  Robust parameter extraction methods are proposed and validated with experimental data

For the first time, a semi-analytic formulation of the light extraction efficiency (LEE) of MicroLEDs is presented. The model is based on light tracing equations and delineates the contributions of reflection on the sidewalls of the MicroLEDs to enhance LEE compared to large LED.

Quantum dot light-emitting diode (QDLED) displays promise superior color gamut with respect to organic light-emitting diode (OLED) displays and liquid-crystal displays (LCDs).  In this paper, for the first time, a data-validated closed-form physics-based expression is derived for the I-V characteristics of QDLEDs. The I-V equation is derived using an approximation scheme which not only brings the previously intractable transport mechanisms back into the fold of analytic tractability but emphasizes the underlying physics of each transport mechanism in doing so. The model is shown to fit state-of-the-art experimental data over a large range of operating currents. The model may be used for circuit simulations.

A simple, four-parameter formula is proposed and used to smooth noisy transistors  curves for the purpose of stable extraction of transistor field-effect mobility and threshold voltage.  The proposed smoothing shape function is found to work for  data obtained for short and long transistors, low and high drain voltage, and for TFTs, ET-SOI, and Trigate MOSFETs