During the fabrication of a double gate TFET structure, there is a high chance of gate misalignment which may affect the sensitivity of the sensors. In this paper, we investigated various effects of gate misalignment and switching characteristics of charge plasma-based triple metal double gate vertical TFET on electrical characteristics. We observed effects on analog/RF parameters on the proposed structure such as transconductance (g m), output conductance (g ds), intrinsic gain (A VO), total gate capacitance (C GG), and cut-off frequency (f T), along with threshold voltage (V TH) and sub-threshold slope (SS). The work focuses on the investigation of these parameters in three scenarios of gate misalignment: towards the drain, towards the source, and towards the drain and source with different probable percentages of misalignment. The results are analyzed by considering SiO 2 and HfO 2 as gate oxide materials.