In this work, we report the first demonstration of an ultraviolet light-emitting diode (LED) with boron-containing multiple quantum wells. Electroluminescence emission from the BAlGaN LED was observed at 350 nm, with higher intensity compared to the AlGaN reference LED. A higher operating voltage compared to the reference LED was also observed which may be attributable to a nanomasking behaviour of boron in (Al)GaN alloys.