Investigation of β-Ga2O3-based HEMT for Low Noise Amplification and RF
Application
Abstract
Here we demonstrate a two-dimensional β-gallium oxide-based high
electron mobility transistor (HEMT) comprising of a finite gap—access
region gap (L_ARG ) in Ohmic-contact access regions with record
transconductance linearity. Apart from limiting two-dimensional electron
gas (2DEG) density n_s dependency on gate voltage, higher saturation
current is estimated for the proposed design. Since the access regions
length directly affects the Capacitance of the device and resultant
switching applications. In this work, the effect of the gate-source and
gate-drain length on device linearity is performed using Atlas-2D
simulations. C-V characteristics of the proposed device are explained
based on the physical explanation and validated using appropriate
models. The higher values of transconductance g_m and current gain
cut-off frequency f_T on a large span of operating voltages ensure
improved transistor performance for low-noise amplification and RF
application and are reported for the first time.