A novel ten parameters analytical nonlinear current voltage model for GaN HEMTs is described in this article. The empirical model correctly determines the first function (scale factor) and second function (shape factor) of I ds dependency on V gs and V ds. The first and second function has been taken from the Angelov and Yang models to assess the effects of bias (V gs ,V ds) related traps (gate and drain lag), self-heating, virtual gate formation, drain induced barrier lowering etc. and their involvement in the proposed I-V model equation for all the HEMTs devices. The proposed model has been evaluated with the lookup table-based model and found in close agreement between the measured data and the optimized curves on two different types of GaN HEMTs. This convenient yet precise empirical I-V model could be easily accomplished with GaN HEMT for computer aided circuit design and simulation.