Compound/silicon heterojunction (SCH) solar cells have been widely studied due to the low parasitic absorption of the window layer, high short-circuit current, and simple preparation process. So far, most reported SCH solar cells are small-area devices. By depositing MoO _x hole transport layer using hot-wire oxidation-sublimation deposition technique and employing a front-contact back-junction cell architecture, the large-area SCH solar cells are successfully fabricated on M6 (166 mm) n-type silicon wafers. Indium cerium oxide (ICO) film with the optimal thickness of about 110 nm is inserted between MoO _x and Ag. The ICO/Ag stack functions well as a back reflector and is beneficial for increasing the short-circuit current density, reducing the contact resistance, and improving the device stability. A power conversion efficiency of 21.59% is achieved on the champion SCH solar cell with the device area of 274.15 cm ².