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Optimized recess etching criteria for T-gate fabrication achieving ft= 290 GHz at Lg= 124 nm in metamorphic HEMT with In0.7Ga0.3As channel
  • +5
  • Jong Yul Park,
  • Byoung-Gue Min,
  • Jong-Min Lee,
  • Woojin Chang,
  • Dong Min Kang,
  • E-San Jang,
  • Junhyung Kim,
  • Jeonggil Kim
Jong Yul Park
Electronics and Telecommunications Research Institute

Corresponding Author:jongyulpark@etri.re.kr

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Byoung-Gue Min
Electronics and Telecommunications Research Institute
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Jong-Min Lee
Electronics and Telecommunications Research Institute
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Woojin Chang
Electronics and Telecommunications Research Institute
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Dong Min Kang
Electronics and Telecommunications Research Institute
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E-San Jang
Electronics and Telecommunications Research Institute
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Junhyung Kim
Electronics and Telecommunications Research Institute
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Jeonggil Kim
Electronics and Telecommunications Research Institute
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Abstract

We propose criteria for recess etching to fabricate T-gate used in InGaAs HEMTs. By patterning additional rectangular pads on the source and drain metals in the e-beam lithography step, it is possible to measure the drain-to-source resistance (Rds) and current (Ids). the ratio (Γ) of before and after etching for each Rds and Ids can be used as criteria to determine the point in time to stop etching. By performing recess etching with Γ= 1.97 for Rds and Γ= 0.38 for Ids on an epiwafer having cap doping concentration of 2= 1019 cm−3 and channel indium content of 0.7, we have fabricated InGaAs mHEMT device showing gm,max= 1603 mS/mm and ft= 290 GHz at Lg= 124 nm. The criteria presented can be applied to InGaAs HEMTs with various epitaxial structures.
14 Apr 2023Submitted to Electronics Letters
14 Apr 2023Submission Checks Completed
14 Apr 2023Assigned to Editor
27 Apr 2023Reviewer(s) Assigned
04 May 2023Review(s) Completed, Editorial Evaluation Pending
09 May 2023Editorial Decision: Revise Major
05 Jul 20231st Revision Received
06 Jul 2023Submission Checks Completed
06 Jul 2023Assigned to Editor
06 Jul 2023Review(s) Completed, Editorial Evaluation Pending
07 Jul 2023Editorial Decision: Accept