A low flicker-noise Darlington low-noise-amplifier (LNA) based on pHEMT technology is introduced in this article. The proposed amplifier adopts a Darlington cascode structure to increase the gain. A negative feedback network and a shunt peaking inductance are employed to ensure a flat frequency response and broadband stability performance. Moreover, through quantitatively analyzing the flicker noise generation mechanism, a novel gate-channel compensation capacitor scheme is proposed. By introducing this gate-channel capacitor, the flicker-noise caused by active biasing can be shifted to lower frequencies, thereby significantly improving the noise figure (NF) at low frequencies without affecting the amplifier gain. The fabricated LNA attains the NF better than 2.2 dB, the gain larger than 15.7 dB, with input-output (I/O) return losses better than 12 dB over the frequency range of 0.1-6 GHz. The output 1 dB compression point (OP1dB) exceeds 17.2 dBm, and the total chip area is only 0.88 mm2