A Comprehensive Threshold Voltage Model for Si-Based MOSFETs from Room
to Cryogenic Temperatures
- Yijie Zhang,
- Xinyi Zhang,
- Guohe Zhang,
- Daofeng Zhang,
- Bo Li,
- Lei Wang,
- Jianhui Bu
Yijie Zhang
Chinese Academy of Sciences Institute of Microelectronics
Author ProfileXinyi Zhang
Chinese Academy of Sciences Institute of Microelectronics
Author ProfileDaofeng Zhang
Chinese Academy of Sciences Institute of Microelectronics
Author ProfileBo Li
Chinese Academy of Sciences Institute of Microelectronics
Author ProfileLei Wang
Chinese Academy of Sciences Institute of Microelectronics
Author ProfileJianhui Bu
Chinese Academy of Sciences Institute of Microelectronics
Corresponding Author:bujianhui@ime.ac.cn
Author ProfileAbstract
This study analyses various factors that affect the threshold voltage of
MOSFETs at deep cryogenic temperatures, including band-tail state,
field-assisted ionization, and interface traps. Based on the analysis, a
new model is developed for Si-based MOSFETs covering a wide temperature
range from 10K to 300 K. The model's validity is confirmed through
experiments of bulk silicon and FDSOI MOSFETs.11 Nov 2024Submitted to International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 12 Nov 2024Submission Checks Completed
12 Nov 2024Assigned to Editor
12 Nov 2024Review(s) Completed, Editorial Evaluation Pending
15 Nov 2024Reviewer(s) Assigned
