The article aims to review compact modeling techniques available in open literature and to find a best-fit model for GaN HEMTs under particular bias conditions. In order to achieve the desired objective, evolutionary algorithm based performance evaluation of different small signal parameters has been carried out. In the evaluation process, in addition to scattering parameter based evaluation, gain and stability of the device are also considered. The Differential evolution algorithm has been considered as one of the representative evolutionary algorithms. The evaluation has been carried out on a 4×0.1×75 µm 2GaN/SiC HEMT under forward bias conditions.The model that matches the measured data the most has been deemed the best-suited small signal model based on the performance evaluation.