Pulse-Width-Modulated (PWM) thermo-optic tuning in silicon photonics requires power supplies with low quiescent current, compact size, and fast PWM output voltage. However, the transient performance of conventional outputcapacitorless low-dropout regulators (OCL-LDOs) is limited by their loop bandwidth and slew rate, which prevents them from achieving fast PWM tuning. Inspired by application-specific designs (e.g., GPU, TPU, etc.) that sacrifice general performance for specific performance improvements, this paper presents a gate-switching (GS) LDO that is optimized for fast PWM tuning instead of general transient response. In the proposed design, the speed of PWM tuning is independent of the global feedback loop of the LDO and is only limited by the discharging speed of the pass transistor gate, which is accelerated through a synchronized gate discharging (SGD) block. This design has been implemented in a 65 nm standard CMOS process, occupying an active area of 2800 µm 2. With a unity-gain-frequency (UGF) of 27.8 MHz, this design achieves an average settling time of 15 ns when transitioning between zero load current and the maximum output current, significantly faster than its 1/UGF value. With a 1.2 V input voltage, it can generate a 1-MHz, 1-Vpp output voltage with a duty ratio ranging from 2.5% to 99.5% with a 50 Ω heater load.