Note: In the electrical structure of hybridization (metal nanotube), the reaction with hydrogen and fluorine gas, by entering SP3, turns the hybridization structure of metal nanotube into a semiconductor. These reactions sometimes destroy the walls of nanotubes and lead to the formation of amorphous carbon or graphite layered structures. By hydrogenation of single-walled nanotubes, the semiconducting nature of SWCNTs increases at room temperature. Strong plasma or reaction at high temperature causes the wall of metal nanotubes to be etched. that semiconductor SWCNTs are not damaged. Therefore, it is very important to control the reaction conditions. In nanotubes, the reaction with methane plasma removes metal SWCNTs without destroying semiconductor SWCNTs. In the method of using nanomolecular soft hydrogen plasma, in which hydrogen plasma is used to convert metal SWCNTs into semiconducting SWCNTs, and in this case, the walls of the nanotubes are not destroyed or etched. These reactions, which are carried out in the gas phase, cause in-situ and high-scale fabrication of TFTS and FETS with semiconductor nanotubes, which is very important for the commercialization of high-efficiency devices based on nanotubes. By choosing suitable reactive gases, this method can also be used for selective reactivity with semiconductor nanotubes. by reacting SWCNTs SO3 as under neutral gas in the presence of gas; Reactive gas inside the furnace at 400 C◦ temperature, semiconductor nanotubes are preferred with reactive gas . After that, the nanotube is heated to a temperature of 900°C to restore the metal nanotubes with structural defects. This process is a simple way to enrich the nanotube sample from metal nanotubes. The mass production of metal nanotubes can be done with a more precise control of the reaction conditions and finally increase the production scale of its uses, including conductive films and transparent electrodes.