Note: In the electrical structure of hybridization (metal nanotube), the reaction with hydrogen and fluorine gas, by entering  SP3, turns the hybridization structure of metal nanotube into a semiconductor. These reactions sometimes destroy the walls of nanotubes and lead to the formation of amorphous carbon or graphite layered structures. By hydrogenation of single-walled nanotubes, the semiconducting nature of SWCNTs increases at room temperature. Strong plasma or reaction at high temperature causes the wall of metal nanotubes to be etched.  that semiconductor SWCNTs are not damaged.  Therefore, it is very important to control the reaction conditions.  In nanotubes, the reaction with methane plasma  removes metal SWCNTs without destroying  semiconductor SWCNTs. In  the method of using  nanomolecular soft hydrogen plasma, in which  hydrogen plasma is used to convert metal SWCNTs into  semiconducting SWCNTs, and in  this case, the walls of the nanotubes  are not destroyed or etched.  These reactions, which are carried out in the gas phase,  cause in-situ and high-scale fabrication of TFTS and  FETS with semiconductor nanotubes,  which is very important for the commercialization of high-efficiency devices  based on nanotubes.  By choosing suitable reactive gases, this  method can also be used for selective reactivity with  semiconductor nanotubes.  by reacting SWCNTs SO3 as  under neutral gas in the presence of gas; Reactive gas inside the furnace at 400 C◦ temperature, semiconductor nanotubes  are preferred  with reactive gas . After that, the nanotube is heated to a temperature of 900°C  to restore the metal nanotubes  with structural defects. This process  is a simple way to enrich the nanotube sample from  metal nanotubes. The mass production of metal nanotubes  can be done with a more precise control of the reaction conditions  and finally increase the  production scale of its uses, including conductive films and  transparent electrodes.
Note:  ( endohedral nanostructures)  means a natural, accidental or manufactured substance containing particles, in an unconfined state or as an aggregate or as agglomerate and where for 50% or more of the particles in the number size distribution, One or more external dimensions in the size range 1 nm - 100 nm in certain cases and in cases where, the size distribution threshold may be replaced by a threshold between nanoparticles of the material.Inferring from the above,  nanostructures  with one or more external dimensions less than 1 nm should be considered as vital tools in nanoelectronics. ( endohedral nanostructures)  that react naturally. or produced as a by-product of combustion (unintentional) from combustion processes. They are usually physically and chemically heterogeneous and are often called porous particles. On the other hand,  (  endohedral nanostructures)  which  are produced and designed from multiple structures with physical and electronic purposes for a specific purpose or function. The important feature of all  ( endohedral nanostructures)  is summarized in the fact that the number of atoms (surface) in them is more than the number of atoms (volume). This ratio increases with decreasing size (nanoparticle). Therefore, the size of the nanoparticle is considered its most important feature. The shapes and sizes  ( endohedral nanostructures)  are naturally determined based on the composition and conditions of their formation. The characteristics  of  ( endohedral nanostructures)  in turn  determine the originality of the nanostructure characteristics and their possible fields of operation. The range from 1 to 1000 nm  is introduced  as the range of  ( endohedral nanostructures) .