Note: Since the operation of  nMOS transistors is based on an electric field resulting from the input gate voltage (the name field effect is for this reason), it makes the field effect transistor a voltage-based component. nMOS transistors  are a single-pole semiconductor device whose characteristics are very similar to the same bipolar transistor.Some of the features of this part are high efficiency, instantaneous operation, resistance and cheapness, which can be replaced in most electronic circuits with bipolar junction transistors and structurally similar (such as BJT).

Note: In  nMOS transistors,   current amplification varies depending on the direction of the electric field and responds to electric fields of different sizes.  This results in useful electronic behavior depending on how the voltage  (or electronic field  ) is applied, which in an nMOS transistor is called (bias).nMOS transistors use a voltage to apply to the input terminal, which is called the gate, and the current passing through it is proportional to this voltage.Since the operation of  nMOS transistors   is based on an electric field resulting from the input gate voltage (the name field effect is for this reason), it makes the field effect transistor a voltage-based component. nMOS transistors  are a single-pole semiconductor device whose characteristics are very similar to the same bipolar transistor. Some of the features of this part are high efficiency, instantaneous operation, resistance and cheapness, which can be replaced in most electronic circuits with bipolar junction transistors and structurally similar (such as BJT).Understanding how an  nMOS transistor works  is difficult because it involves  fairly advanced quantum mechanics. However, at the simplest level, the operation of an  nMOS transistor can be understood  by looking at the flow of positive charges (or "holes  ") and negative charges (electrons).  pn junctions  are also important in the operation of a transistor.  Proper operation of the  nMOS transistor  requires a process   known  as biasing .  Semiconductors can be left with materials so that they are more than electrons  that are easily displaced  - which is generally used in  the negative  or  n-type region  .  In general, as a hint - also, they can be made with elements that create an over-hole that easily absorbs these doped electrons   or   p   -type   region.

Note: Since the FinFEET nanotransistors in  to achieve, a larger discharge current in the nanotransistor, the width of the channel according to the height as well as the thickness, which the layers of nano CNTs It keeps it in a smaller range.FinFEET nanotransistors are a field-effect nanotransistor metal-oxide-semiconductor ) that is on a substrate < a i=3> is made. that the gate is located on two, three or four sides of the channel or is wrapped. The channel forms a double gate structure. To these devices, the general name "finfets" given because the source/drain region forms fins on the silicon surface. FinFET devices compared to flat technology and using nanowires in the structure and (complementary metal oxide and semiconductor) < a i=8>have significantly faster switching and higher current density.

Note: The dimensions of the antenna and nano system or nano sensor set, working frequency, power losses, range and dimensions of the sensor network, the structure and facilities of the power supply system and the physical platform of communication between different parts of a nano system are the main factors and parameters that every One is decisive and determines the ability to build and the performance of the final system.Nano network is a communication network at nano scale between nano devices. Nano devices face certain challenges in performance due to limitations in power management processing ability .  Therefore, these devices are expected to perform simple tasks that require different and new approaches. 

Note: nanotube antennas at a glance  First, it gives us the impression that it is similar to the Dipole antenna, which is designed in small dimensions  has been But in fact it is not the case. In the main theory of Dipole antennas to determine the current distribution on the antenna, that the Dipole radius is larger than the skin depth and also Resistance losses are so low that they can be ignored.with noticing that the nanodipole L/d is significantly reduced, it cannot be used . is completely excluded. Because here the electrons are only allowed to move along the conductor string and therefore the current distribution is effectively one-dimensional. In addition to the fact that the electrons only move in one dimension, there are two important issues. Also happens, large inductance and resistance. These characteristics create a very different behavior for nanotube antennas compared to classical antennas. The main difference is that the current distribution is alternating with a wavelength that is 100 times smaller than the free space wavelength for a certain thermal frequency. The wavelength of current distribution depends on the wave speed in that mode. If the speed of the wave is the same as the speed of light, the wavelength of the current distribution is the wavelength of electromagnetic waves in free space. On the other hand, the wave speed in nanotubes is about one hundred times lower than the speed of light. This is because in circuit theory, the wave speed is equal to the inverse of the square root of the capacitive capacitance per unit length multiplied by the inductive capacitance per unit length.  In one-dimensional electric conductors such as nanotubes, the skin depth mode.

Note: The bandwidth of the microstrip antenna is very small. Rectangular microstrip antennas are generally narrow. The bandwidth of rectangular microstrip antennas is usually 3%. Second, the microstrip antenna is designed to operate at 100 MHz, but  has a resonance of about 96 MHz. This change is due to the marginal fields around the antenna, which makes the  microstrip antenna appear longer.The microstrip antenna should be half the wavelength in the dielectric medium (substrate). The width  of the micro-strip antenna controls the input impedance. Larger bandwidth can also increase bandwidth. For a square patch antenna powered by the above method, the input impedance will be about 300 ohms. By increasing the width, the impedance can be reduced. However, to reduce the input impedance to 50 ohms, you often need a very wide microstrip antenna that takes up a lot of valuable space. More width  controls the radiation pattern. Communication between nano-devices is a major challenge related to the development of nano-antennas and related electromagnetic receivers. Reduce the size of a traditional  antenna  to hundreds of nanometers Leads to  very high operating frequencies  . At THz band frequencies, the very large bandwidth available leads to the loss of a much higher path than the lower frequency bands.

Note: by placing the rectifier properly in the place of the nano antenna feed gap, the desired DC power is produced.In the Solar Rectenna system, millions of nano antennas with a rectifier are conveniently placed next to each other and each one is individually produced  which is a semiconductor diode with low voltage drop and relatively fast response speed  is capable of rectifying and detecting signals with a frequency of up to 5 < a has i=9>terahertz. MIM diode can be used as a replacement for Schottky diode due to the femtosecond tunneling time and increased response speed  It is used in the infrared and visible frequency range.

Note:  Oligophenylene  vanillin  nanowires  have a structure that   has an amazing length-to-width ratio .  Nanowires are very thin - it is possible to create nanowires with a diameter of only one nanometer,  nanowires are used to create the smallest transistor (nanotransistors).Oligophenylene vanillin  nanowires can  have   insulating, semiconducting or metal properties . Insulators do not carry electrical charges, while metals carry very good electrical charges.  Semiconductors lie between the two and are charged under the right conditions.   By placing semiconductor wires in the right configuration, transistors can be made that either  act as switches  or  amplifiers  . Some of the interesting and anti-flexible properties of nanowires are due to their small scale.

Note: Fabrication of arrays of vertically aligned cobalt nanowires on flat surfaces and field emission (FE) using them as electron cathodes is used.These arrays are obtained by electrodeposition in the form of nanoparticles on Au/Ti/Si substrates at very low temperature (<100°C).  After pattern removal, the arrays consist of structurally upright nanowires with high aspect ratios, uniform dimensions, and predetermined densities.  Electron field emission measurements of metallic properties and propagation of cobalt nanowires.

Note: Silicon wafer substrates can be used for sample substrates, micro-fabrication, substrate for nanowires or biological substrates.Useful flat bed of particles Silicone wafers bonded with nanowires and  for applications Biologically, Si (silicon wafer) has properties similar to glass and can be used to mount or grow particles of nanowires. It can be easily wiped or used as a whole wafer for nanowire reproduction.Silicon nanowire arrays or SiNWs are vertical arrays of nanowires. The silicon wafers are flat on the crystalline silicon wafer substrate. These nanowires are made by a catalytic oxidation and dissolution of Si in the presence of metal catalyst nanoparticles - a self-organized process commonly referred to as a metal-chemically assisted process. /span> For nanoelectronics applications, it is an ideal sample substrate for small nanoscale particles due to its low background signal and highly polished surface. are known. , silicon resembles glass, and this makes it a suitable support for the growth and/or nanoparticle mounting of nanowires. Silicone wafers.

Note:   Nano biochip electrical nano biochips in identifying and decoding (RNA _ DNA)  the biggest advantage of DNA arrays is its high speed and power, and they are useful in various genomic applications, including single ones,  especially  Nano electrical nano biochips biochips are used in the identification and decoding of functional (RNA _ DNA)  to investigate basic biological characteristics such as investigating the interaction of proteins with other ligands such as proteins, peptides, lipids or other molecules.  The most common application of  electric nano biochips Nano biochip in identification and decoding (RNA _ DNA)  through comprehensive profiling of cells  are able to perform various types of chemical and cellular analysis, isolation and reaction.

Note: MEMSs include small mechanical structures  , micro-sensors, microactuators, and  microelectronics all integrated into the same silicon chip shape  .In designing MEMS systems, when ICs  are designed to utilize the electrical properties of silicon  , MEMS either derives from the mechanical properties of silicon  or from both the electrical and mechanical properties of silicon  . Microsensors make changes to the system by  obtaining information on mechanical, thermal, magnetic, chemical, or electromagnetic  phenomena  . MEMS devices are very small, their components  usually