Note: In nanoelectronics, surface plasmon intensification is the coordinated and cumulative oscillations of metal electrons that are excited by radiation.In electronic science, the topic of nano revolves around (nano memories, nano chips and fast nano chips and nano electronic components) with less weight and more efficiency.  Nanotechnology, knowledge, engineering and technology on a nano scale, or in other words, studying the application of very small objects and their use in all fields of science such as chemistry, biology, electronics; Material science and engineering. The history of nanotechnology describes the development of concepts and experimental work done in the field of nanotechnology. Although nanotechnology is one of the recent advances in scientific research, the development of its fundamental concepts has taken place over a long period of time. The condition of oscillation is that the frequency of the photons of the radiated beam becomes the same as the natural frequency of the surface electrons (which is to overcome the central nuclear force). The resonance of surface plasmons in structures with nanometer dimensions is called Localized Surface Plasmon Resonance. Localized surface plasmons are non-emissive excitation of conduction band electrons of metal nanostructures to which an electromagnetic field is coupled. Plasmonic waves are generated by using the scattering problem from a conductive nanoparticle whose dimensions are below the wavelength of the electromagnetic field of the excitation beam. These nanostructures consist of metal and dielectric, whose dimensions are below the excitation wavelength (the wavelength of the radiation that causes the excitation of plasmonic waves). Plasmonic is based on the process of interaction between electromagnetic waves and conduction electrons in metals with nano dimensions.  Analytically, the reason is the rapid drop in the energy of electrons passing through metals, and it was concluded that this energy is spent on the cumulative movement and oscillation of the free electrons of the metal and called it plasmon.

Note: Carbon nanotubes have many uses in nanoscience and nanoelectronics. Carbon is one of the amazing elements of nature that can be found in nature in four different forms: graphite, diamond, nanotubes and buckyballs. All these four forms are solid and in their structure, carbon atoms are completely and regularly placed next to each other.Carbon is one of the most important elements in nature, and its many uses in human life confirm this point well. For example,  steel - which is one of the main engineering alloys - is obtained from the dissolution of about two percent of carbon in iron; Different types of steel can be obtained by changing the carbon percentage  by only a few hundred percent. "Organic chemistry" is also a science that examines compounds containing "carbon" and  "hydrogen" and polymer engineering is based only on the carbon element. Carbon is found in four different forms in nature,  all of these four forms are solid, and in their structure, carbon atoms are placed next to each other in a completely regular manner.These structures  are:01. Graphite02. Diamond03. (bucky wings) like C6004. NanotubesGraphite is one of the most important carbon structures in nature, and it is formed by placing six carbon atoms next to each other. These  carbon atoms are combined with each other in such a way that they create a regular hexagon and from their sum, a sheet is obtained which is considered as  a (graphite layer).

Note:  Since material parameters change significantly with frequency.  In particular, this means that model experiments with, for example, microwaves and larger metallic structures cannot replace experiments with metallic nanostructures at optical frequencies.Surface charge density fluctuations associated with surface nanoplasmons at the interface between a metal and a dielectric can cause strongly enhanced near-optical fields that are spatially confined near the metal surface.  Similarly, if the electron gas is confined in three dimensions, such as a small particle, the overall displacement of the electrons relative to the positively charged lattice leads to a restoring force, which in turn gives rise to the specific particle-plasmon. Resonance depends on the geometry of the particle.  In properly shaped (usually pointed) particles, localized charge accumulation associated with strongly enhanced optical fields can occur. The change of some properties such as conductivity in nanotransistors and electromagnetic properties in nanowires may occur in dimensions of only a few nanometers. Surface plasmon intensification in structures with nanometer dimensions is called local surface plasmon intensification. Patterning magnetic materials into arrays of nanoscale dots can result in a very strong and very controllable change in the polarization of light when a beam is reflected from the array.  This discovery can increase the sensitivity of optical components for telecommunication and biosensing applications. Coupling between light and magnetism in  electrical nanostructures of localized surface plasmons (Localized Surface Plasmon) results from quantum electronic nano interactions.  These interactions lead to magneto-optical effects that change properties, such as the polarization axis or intensity of light.  Interactions between light and matter are enhanced at the nanoscale.  This is a key motivation in the field of plasmonics, which leads to the construction of nanoelectronic devices based on the interaction of light with metal nanostructures. In the structure of electrical nanostructures of localized surface plasmons (Localized Surface Plasmon), a metal nanoparticle in nano size acts very much like an antenna for visible wavelengths.  Such antennas for us in many everyday devices that operate on much longer radio and microwaves   use a phenomenon called surface lattice resonance, in which all nanoparticles, tiny antennas, are coordinated in a The array radiates.The key to this is the assembly of magnetic nanoantennas on a length scale that matches the wavelength of the incoming light. In periodic arrays, nanoparticles strongly interact with each other and cause collective oscillations.  Such behavior is already observed in metal nanoparticles.Since the material parameters change significantly with frequency.  In particular, this means that model experiments with, for example, microwaves and larger metallic structures cannot replace experiments with metallic nanostructures at optical frequencies.

Note: Theory, modeling and simulation  are widely used as a predictive design tool in the reproduction and manufacturing of dynamic molecules of SWCNT nanotubes and SWCNTs.General methods capable of multi-scale/multi-phenomenon molecular simulations will be developed for the design of SWCNT and SWCNTs  nanotubes  and new nanoscale systems and tools. Dynamic nanomolecular simulations will help in various fields such as biosensors, filter design, as well as identifying the dynamics of complex systems of single-layer and multi-layer nanotubes  .The aim of  the simulation methodology in the molecular nanodynamics of nanotubes  is to intervene in the arrangement of atoms or molecules and to use materials and systems with new abilities and  new tasks, which are all the result of the specific multiplication of molecules and particles. Nano is a device with small dimensions and nano structure.Deterministic molecular dynamics simulation: is a method used to  calculate the path of movement of atoms or molecules in multi-atom systems of more than ten atoms to several  billion atoms.Monte Carlo simulation (Stochastic): It is a numerical method that tries to reach the final equilibrium state of the system by sampling the nanomolecular state space with  importance. Based on probabilities, this method brings the configuration of the investigated system close to the minimum energy condition .Initio Ab molecular dynamics:  Initio Ab molecular dynamics or quantum molecular  dynamics performs the movement path of the atomic system by solving the Schrödinger equations and obtaining  information on the subatomic scale.

Note: Since the operation of  nMOS transistors is based on an electric field resulting from the input gate voltage (the name field effect is for this reason), it makes the field effect transistor a voltage-based component. nMOS transistors  are a single-pole semiconductor device whose characteristics are very similar to the same bipolar transistor.Some of the features of this part are high efficiency, instantaneous operation, resistance and cheapness, which can be replaced in most electronic circuits with bipolar junction transistors and structurally similar (such as BJT).

Note: In  nMOS transistors,   current amplification varies depending on the direction of the electric field and responds to electric fields of different sizes.  This results in useful electronic behavior depending on how the voltage  (or electronic field  ) is applied, which in an nMOS transistor is called (bias).nMOS transistors use a voltage to apply to the input terminal, which is called the gate, and the current passing through it is proportional to this voltage.Since the operation of  nMOS transistors   is based on an electric field resulting from the input gate voltage (the name field effect is for this reason), it makes the field effect transistor a voltage-based component. nMOS transistors  are a single-pole semiconductor device whose characteristics are very similar to the same bipolar transistor. Some of the features of this part are high efficiency, instantaneous operation, resistance and cheapness, which can be replaced in most electronic circuits with bipolar junction transistors and structurally similar (such as BJT).Understanding how an  nMOS transistor works  is difficult because it involves  fairly advanced quantum mechanics. However, at the simplest level, the operation of an  nMOS transistor can be understood  by looking at the flow of positive charges (or "holes  ") and negative charges (electrons).  pn junctions  are also important in the operation of a transistor.  Proper operation of the  nMOS transistor  requires a process   known  as biasing .  Semiconductors can be left with materials so that they are more than electrons  that are easily displaced  - which is generally used in  the negative  or  n-type region  .  In general, as a hint - also, they can be made with elements that create an over-hole that easily absorbs these doped electrons   or   p   -type   region.

Note: Since the FinFEET nanotransistors in  to achieve, a larger discharge current in the nanotransistor, the width of the channel according to the height as well as the thickness, which the layers of nano CNTs It keeps it in a smaller range.FinFEET nanotransistors are a field-effect nanotransistor metal-oxide-semiconductor ) that is on a substrate < a i=3> is made. that the gate is located on two, three or four sides of the channel or is wrapped. The channel forms a double gate structure. To these devices, the general name "finfets" given because the source/drain region forms fins on the silicon surface. FinFET devices compared to flat technology and using nanowires in the structure and (complementary metal oxide and semiconductor) < a i=8>have significantly faster switching and higher current density.

Note: The dimensions of the antenna and nano system or nano sensor set, working frequency, power losses, range and dimensions of the sensor network, the structure and facilities of the power supply system and the physical platform of communication between different parts of a nano system are the main factors and parameters that every One is decisive and determines the ability to build and the performance of the final system.Nano network is a communication network at nano scale between nano devices. Nano devices face certain challenges in performance due to limitations in power management processing ability .  Therefore, these devices are expected to perform simple tasks that require different and new approaches. 

Note: nanotube antennas at a glance  First, it gives us the impression that it is similar to the Dipole antenna, which is designed in small dimensions  has been But in fact it is not the case. In the main theory of Dipole antennas to determine the current distribution on the antenna, that the Dipole radius is larger than the skin depth and also Resistance losses are so low that they can be ignored.with noticing that the nanodipole L/d is significantly reduced, it cannot be used . is completely excluded. Because here the electrons are only allowed to move along the conductor string and therefore the current distribution is effectively one-dimensional. In addition to the fact that the electrons only move in one dimension, there are two important issues. Also happens, large inductance and resistance. These characteristics create a very different behavior for nanotube antennas compared to classical antennas. The main difference is that the current distribution is alternating with a wavelength that is 100 times smaller than the free space wavelength for a certain thermal frequency. The wavelength of current distribution depends on the wave speed in that mode. If the speed of the wave is the same as the speed of light, the wavelength of the current distribution is the wavelength of electromagnetic waves in free space. On the other hand, the wave speed in nanotubes is about one hundred times lower than the speed of light. This is because in circuit theory, the wave speed is equal to the inverse of the square root of the capacitive capacitance per unit length multiplied by the inductive capacitance per unit length.  In one-dimensional electric conductors such as nanotubes, the skin depth mode.

Note: The bandwidth of the microstrip antenna is very small. Rectangular microstrip antennas are generally narrow. The bandwidth of rectangular microstrip antennas is usually 3%. Second, the microstrip antenna is designed to operate at 100 MHz, but  has a resonance of about 96 MHz. This change is due to the marginal fields around the antenna, which makes the  microstrip antenna appear longer.The microstrip antenna should be half the wavelength in the dielectric medium (substrate). The width  of the micro-strip antenna controls the input impedance. Larger bandwidth can also increase bandwidth. For a square patch antenna powered by the above method, the input impedance will be about 300 ohms. By increasing the width, the impedance can be reduced. However, to reduce the input impedance to 50 ohms, you often need a very wide microstrip antenna that takes up a lot of valuable space. More width  controls the radiation pattern. Communication between nano-devices is a major challenge related to the development of nano-antennas and related electromagnetic receivers. Reduce the size of a traditional  antenna  to hundreds of nanometers Leads to  very high operating frequencies  . At THz band frequencies, the very large bandwidth available leads to the loss of a much higher path than the lower frequency bands.

Note: by placing the rectifier properly in the place of the nano antenna feed gap, the desired DC power is produced.In the Solar Rectenna system, millions of nano antennas with a rectifier are conveniently placed next to each other and each one is individually produced  which is a semiconductor diode with low voltage drop and relatively fast response speed  is capable of rectifying and detecting signals with a frequency of up to 5 < a has i=9>terahertz. MIM diode can be used as a replacement for Schottky diode due to the femtosecond tunneling time and increased response speed  It is used in the infrared and visible frequency range.

Note:  Oligophenylene  vanillin  nanowires  have a structure that   has an amazing length-to-width ratio .  Nanowires are very thin - it is possible to create nanowires with a diameter of only one nanometer,  nanowires are used to create the smallest transistor (nanotransistors).Oligophenylene vanillin  nanowires can  have   insulating, semiconducting or metal properties . Insulators do not carry electrical charges, while metals carry very good electrical charges.  Semiconductors lie between the two and are charged under the right conditions.   By placing semiconductor wires in the right configuration, transistors can be made that either  act as switches  or  amplifiers  . Some of the interesting and anti-flexible properties of nanowires are due to their small scale.