Figure 1. TSSG growth of 3C-SiC single crystals. a) Schematic
of the setup for growing 3C-SiC by TSSG. b) Schematic of three basic
growth processes for TSSG: 1. Dissolving C from the graphite crucible at
high temperature region, 2. Transportation of C from the high
temperature region to the low temperature driven by the convection, 3.
Crystallization of SiC on the low temperature seed crystal. c) Proposed
growth model of 3C-SiC on a 4H-SiC seed via TSSG. d-f) Photographs of
2-, 3-inch 3C-SiC boule after rounded cutting process and as-grown
4-inch 3C-SiC boule. The thickness of the 2~4-inch
3C-SiC boule is above 4.0 mm. g) Photograph of 3C-SiC single crystal
wafer.
Table 1. Properties of 3C-SiC bulk single crystals.