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Dynamic on-state resistance instability characterization of a Multi-chip-GaN MIS-HEMTs Cascode power module
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  • Surya Elangovan,
  • Stone Cheng,
  • Wen Jang,
  • Edward Yi Chang
Surya Elangovan
National Yang Ming Chiao Tung University

Corresponding Author:arulsurya.en08@nycu.edu.tw

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Stone Cheng
National Yang Ming Chiao Tung University
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Wen Jang
National Yang Ming Chiao Tung University
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Edward Yi Chang
National Yang Ming Chiao Tung University Department of Material Science and Engineering
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Abstract

The dynamic on-state resistance instability of a high-current cascode multi-GaN-chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The presented double pulse test (DPT) topology is utilized to evaluate switching dependencies on voltage, current, and frequency, showing its versatility in investigating the switching instability of the device. The extended defects in the buffer layer resulted in a decrease in dynamic on-state resistance (RDS-ON) under hard switching conditions. Despite this, no noticeable RDS-ON degradation occurs under harsh switching conditions due to electron de-trapping. This study comprehensively analyzes the dynamic stability of a multi-GaN-chip cascode module with devices.
04 Jan 2023Submitted to Electronics Letters
04 Jan 2023Submission Checks Completed
04 Jan 2023Assigned to Editor
16 Jan 2023Reviewer(s) Assigned
03 Apr 2023Review(s) Completed, Editorial Evaluation Pending
08 Apr 2023Editorial Decision: Revise Major
27 Apr 20231st Revision Received
28 Apr 2023Submission Checks Completed
28 Apr 2023Assigned to Editor
28 Apr 2023Review(s) Completed, Editorial Evaluation Pending
30 Apr 2023Editorial Decision: Accept