Figure 6 Normalized XRD patterns of the IHfO:H films annealed at different temperatures for 20 minutes. A H2concentration of 0.8 % was adopted during the deposition.
Figure 7 depicts the annealing temperature dependences of the electrical properties of the IHfO:H films prepared with 0.8 % H2concentration. The sheet resistance, carrier concentration, and Hall mobility of the as deposited IHfO:H film are 22.39 Ω/□, 6.11×1020 cm-3, and 41.48 cm2V-1s-1, respectively. When the annealing temperature is lower or equal to 100 °C, no notable changes occur in the electrical properties of the IHfO:H films. The sheet resistance increases slightly as the annealing temperature increasing to 150 °C and then rapidly climbs to 44.97 Ω/□ when the annealing temperature reaches 250 °C, which is different from the general observed rule that the sheet resistance of the TCO films decreases with the increase of the annealing temperature.21,23,25 The following analysis of Hall mobility and carrier concentration varied with the post-annealing temperature will help us understand this phenomenon.