Figure 2 Normalized XRD patterns of the IHfO:H films with 0 %, 0.5 %,
0.8 %, 1.2 % and 1.5 % H2 concentration after
post-annealing at 200 ℃.
The electrical properties of the IHfO:H films prepared with different
hydrogen concentrations are shown in Figure 3. It can be seen that the
sheet resistance of the IHfO:H films decreases first and then increases
as the increase of the hydrogen concentration, reaching a minimum of
27.53 Ω/□ at a hydrogen concentration of 0.8 %. For TCO films with the
same thickness, the sheet resistance is mainly affected by the mobility
and the carrier concentration. In order to clarify the influence
mechanism of the hydrogen concentration on the sheet resistance of the
IHfO:H films, the Hall mobility and the carrier concentration of the
IHfO:H films were studied, also depicted in Figure 3.