Figure 2 Normalized XRD patterns of the IHfO:H films with 0 %, 0.5 %, 0.8 %, 1.2 % and 1.5 % H2 concentration after post-annealing at 200 ℃.
The electrical properties of the IHfO:H films prepared with different hydrogen concentrations are shown in Figure 3. It can be seen that the sheet resistance of the IHfO:H films decreases first and then increases as the increase of the hydrogen concentration, reaching a minimum of 27.53 Ω/□ at a hydrogen concentration of 0.8 %. For TCO films with the same thickness, the sheet resistance is mainly affected by the mobility and the carrier concentration. In order to clarify the influence mechanism of the hydrogen concentration on the sheet resistance of the IHfO:H films, the Hall mobility and the carrier concentration of the IHfO:H films were studied, also depicted in Figure 3.