Figure 6 Normalized XRD patterns of the IHfO:H films annealed at
different temperatures for 20 minutes. A H2concentration of 0.8 % was adopted during the deposition.
Figure 7 depicts the annealing temperature dependences of the electrical
properties of the IHfO:H films prepared with 0.8 % H2concentration. The sheet resistance, carrier concentration, and Hall
mobility of the as deposited IHfO:H film are 22.39 Ω/□,
6.11×1020 cm-3, and 41.48
cm2V-1s-1,
respectively. When the annealing temperature is lower or equal to 100
°C, no notable changes occur in the electrical properties of the IHfO:H
films. The sheet resistance increases slightly as the annealing
temperature increasing to 150 °C and then rapidly climbs to 44.97 Ω/□
when the annealing temperature reaches 250 °C, which is different from
the general observed rule that the sheet resistance of the TCO films
decreases with the increase of the annealing
temperature.21,23,25 The following analysis of Hall
mobility and carrier concentration varied with the post-annealing
temperature will help us understand this phenomenon.