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Wavelength-stabilized ns-pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions
  • +5
  • Nor Ammouri,
  • Heike Christopher,
  • Jörg Fricke,
  • Arnim Ginolas,
  • Armin Liero,
  • Andre Maassdorf,
  • Hans Wenzel,
  • Andrea Knigge
Nor Ammouri
Ferdinand-Braun-Institut gGmbH

Corresponding Author:nor.ammouri@fbh-berlin.de

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Heike Christopher
Ferdinand-Braun-Institut gGmbH
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Jörg Fricke
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik
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Arnim Ginolas
Ferdinand-Braun-Institut gGmbH
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Armin Liero
Ferdinand-Braun-Institut gGmbH
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Andre Maassdorf
Ferdinand-Braun-Institut gGmbH
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Hans Wenzel
Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik
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Andrea Knigge
FBH
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Abstract

The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture of 50 μm) emits an optical power of 2.2 kW in 8 ns long pulses at an injection current of 1.1 kA. This corresponds to an almost threefold increase of the pulse power compared to a bar with lasers having only a single active region. Due to the integrated surface Bragg grating, the bar exhibits a narrow spectral bandwidth of about 0.3 nm and a thermal tuning of only 68 pm/K.
07 Oct 2022Submitted to Electronics Letters
08 Oct 2022Submission Checks Completed
08 Oct 2022Assigned to Editor
11 Oct 2022Reviewer(s) Assigned
21 Oct 2022Review(s) Completed, Editorial Evaluation Pending
21 Oct 2022Editorial Decision: Revise Minor
11 Nov 20221st Revision Received
13 Nov 2022Submission Checks Completed
13 Nov 2022Assigned to Editor
13 Nov 2022Review(s) Completed, Editorial Evaluation Pending
15 Nov 2022Editorial Decision: Accept
Jan 2023Published in Electronics Letters volume 59 issue 1. 10.1049/ell2.12680