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\begin{document}

\title{Design analysis of four-wave-mixing in SiN nanowires integrated with
graphene oxide films}



\author[1]{David Moss }%
\affil[1]{swinburne university of technology}%


\vspace{-1em}



  
  \date{June 16, 2024}


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\begin{abstract}
We theoretically investigate and optimize four-wave mixing (FWM) in
silicon nitride (SiN) waveguides integrated with two-dimensional (2D)
layered graphene oxide (GO) films. Based on extensive previous
measurements of the material parameters of the GO films, we perform
detailed analysis for the influence of device parameters including
waveguide geometry, GO film thickness, length, and coating position on
the FWM conversion efficiency (CE) and conversion bandwidth (CB). The
influence of dispersion and photo-thermal changes in the GO films is
also discussed. Owing to the strong mode overlap between the SiN
waveguides and the highly nonlinear GO films, FWM in the hybrid
waveguides can be significantly enhanced. We obtain good agreement with
previous experimental results and show that by optimizing the device
parameters to balance the trade-off between Kerr nonlinearity and loss,
the FWM CE can be improved by as much as \textasciitilde{}20.7 dB and
the FWM CB can be increased by \textasciitilde{}4.4 folds, relative to
the uncoated waveguides. These results highlight the significantly
enhanced FWM performance that can be achieved in SiN waveguides by
integrating 2D layered GO films.\emph{}%
\end{abstract}%



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