We characterize the third-order optical nonlinearity in PdSe2 dichalcogenide films via the Z-Scan technique. A strong and negative (self-defocusing) Kerr nonlinearity (n2) of ∼ ‒ 7.65×10-16 m2/W is observed at 800 nm.

We investigate integrated photonic resonators formed by coupled Sagnac loop reflectors (CSLR). Mode splitting in the CSLR resonator is tailored to provide flat-top spectral response for wavelength interleaving and non-blocking switching functions in C band.

We experimentally demonstrate enhanced self-phase modulation in silicon nanowire waveguides integrated with layered graphene oxide films. We achieve spectral broadening of optical pulses in the GO-silicon waveguide with a broadening factor up to 2.96.

We experimentally demonstrate enhanced four-wave mixing in micro-ring resonators (MRRs) integrated with graphene oxide films. We achieve up to ~7.6-dB enhancement in conversion efficiency for a uniformly coated MRR and ~10.3-dB for a patterned device.

We report photonic RF fractional Hilbert transformers and filters based on a 49GHz soliton crystal micro-comb source. By employing up to 80 wavelengths and controlling the channel weights, diverse transfer functions are achieved.

numbers of GO layers and at different pump powers. By optimizing the trade-off between the nonlinearity and loss, we obtain a significant improvement in the FWM conversion efficiency of ≈7.3 dB for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. We also obtain a significant increase in FWM bandwidth for the patterned devices. A detailed analysis of the influence of pattern length and position on the FWM performance is performed. Based on the FWM measurements, the dependence of GO’s third-order nonlinearity on layer number and pump power is also extracted, revealing interesting physical insights about the 2D layered GO films. Finally, we obtain an enhancement in the effective nonlinear parameter of the hybrid waveguides by over a factor of 100. These results verify the enhanced nonlinear optical performance of SiN waveguides achievable by incorporating 2D layered GO films.

We report a large third-order nonlinear optical response of palladium diselenide (PdSe2) films – a two-dimensional (2D) noble metal dichalcogenide material. Both open-aperture (OA) and closed-aperture (CA) Z-scan measurements are performed with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe2 film of β = 3.26 × 10-8 m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of n2 = -1.33×10-15 m2/W – two orders of magnitude larger than bulk silicon. We also characterize the variation of n2 as a function of laser intensity, observing that n2 decreases in magnitude with incident laser intensity, becoming saturated at n2 = -9.96×10-16 m2/W at high intensities. These results verify the large third-order nonlinear optical response of 2D PdSe2 as well as its strong potential for high performance nonlinear photonic devices.

We report a photonic-based radio frequency (RF) arbitrary waveform generator (AWG) using a soliton crystal micro-comb source with a free spectral range (FSR) of 48.9 GHz. We successfully achieve arbitrary shapes including square waveforms with a tunable duty ratio ranging from 10% to 90%, sawtooth waveforms with a tunable slope ratio of 0.2 to 1, and a symmetric concave quadratic chirp waveform with an instantaneous frequency of sub GHz. We achieve good agreement between theory and experiment, validating the effectiveness of this approach towards realizing high-performance, broad bandwidth, nearly user-defined RF waveform generation.

Layered two-dimensional (2D) GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM). The GO films are integrated with SOI nanowires using a large-area, transfer-free, layer-by-layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2-mm-long films of 1−3 layers of GO, and 0.4-mm-long films with 5−20 layers of GO. By fitting the experimental results with theory, the dependence of GO’s n2 on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk-like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 fold, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to FOM > 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.

We report a broadband radio frequency (RF) channelizer with up to 92 channels using a coherent microcomb source. A soliton crystal microcomb, generated by a 49 GHz micro-ring resonator (MRR), is used as a multi-wavelength source. Due to its ultra-low comb spacing, up to 92 wavelengths are available in the C band, yielding a broad operation bandwidth. Another high-Q MRR is employed as a passive optical periodic filter to slice the RF spectrum with a high resolution of 121.4 MHz. We experimentally achieve an instantaneous RF operation bandwidth of 8.08 GHz and verify RF channelization up to 17.55 GHz via thermal tuning. Our approach is a significant step towards the monolithically integrated photonic RF receivers with reduced complexity, size, and unprecedented performance, which is important for wide RF applications ranging from broadband analog signal processing to digital-compatible signal detection.

Optical artificial neural networks (ONNs) — analog computing hardware tailored for machine learning — have significant potential for ultra-high computing speed and energy efficiency. We propose a new approach to architectures for ONNs based on integrated Kerr micro-comb sources that is programmable, highly scalable and capable of reaching ultra-high speeds. We experimentally demonstrate the building block of the ONN — a single neuron perceptron — by mapping synapses onto 49 wavelengths of a micro-comb to achieve a high single-unit throughput of 11.9 Giga-FLOPS at 8 bits per FLOP, corresponding to 95.2 Gbps. We test the perceptron on simple standard benchmark datasets — handwritten-digit recognition and cancer-cell detection — achieving over 90% and 85% accuracy, respectively. This performance is a direct result of the record small wavelength spacing (49GHz) for a coherent integrated microcomb source, which results in an unprecedented number of wavelengths for neuromorphic optics. Finally, we propose an approach to scaling the perceptron to a deep learning network using the same single micro-comb device and standard off-the-shelf telecommunications technology, for high-throughput operation involving full matrix multiplication for applications such as real-time massive data processing for unmanned vehicle and aircraft tracking.

Polarization selective devices, such as polarizers and polarization selective resonant cavities (e.g., gratings and ring resonators), are core components for polarization control in optical systems and find wide applications in polarization-division-multiplexing, coherent optical detection, photography, liquid crystal display, and optical sensing. In this paper, we demonstrate integrated waveguide polarizers and polarization-selective micro-ring resonators (MRRs) incorporated with graphene oxide (GO). We achieve highly precise control of the placement, thickness, and length of the GO films coated on integrated photonic devices by using a solution-based, transfer-free, and layer-by-layer GO coating method followed by photolithography and lift-off processes. The latter overcomes the layer transfer fabrication limitations of 2D materials and represent a significant advance towards manufacturing integrated photonic devices incorporated with 2D materials. We measure the performance of the waveguide polarizer for different GO film thicknesses and lengths versus polarization, wavelength, and power, achieving a very high polarization dependent loss (PDL) of ~ 53.8 dB. For GO-coated integrated MRRs, we achieve an 8.3-dB polarization extinction ratio between the TE and TM resonances, with the extracted propagation loss showing good agreement with the waveguide results. Furthermore, we present layer-by-layer characterization of the linear optical properties of 2D layered GO films, including detailed measurements that conclusively determine the material loss anisotropy of the GO films as well as the relative contribution of film loss anisotropy versus polarization-dependent mode overlap, to the device performance. These results offer interesting physical insights and trends of the layered GO films from monolayer to quasi bulk like behavior and confirm the high-performance of integrated polarization selective devices incorporated with GO films.