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A low-distortion bootstrapped switch based on parasitic capacitance reduction techniques
  • +1
  • ming wang,
  • Yanhan Gu,
  • Li Zeng,
  • Zhangwen Tang
ming wang
Fudan University
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Yanhan Gu
Fudan University
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Li Zeng
Fudan University
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Zhangwen Tang
Fudan University

Corresponding Author:zwtang@fudan.edu.cn

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Abstract

This letter presents a low-distortion bootstrapped switch for improving sampling network linearity. The dynamically driven gate approach and the dynamically driven DNW (Deep N-well) technique are proposed to reduce the parasitic capacitance at crucial nodes. Simulated in a 180nm CMOS process, the proposed switch achieves a total harmonic distortion (THD) of -102.1dB at an 80MHz sampling frequency. This is an 21.4dB increase in THD, over the conventional switch.
03 Dec 2024Submitted to Electronics Letters
09 Dec 2024Submission Checks Completed
09 Dec 2024Assigned to Editor
09 Dec 2024Review(s) Completed, Editorial Evaluation Pending
19 Dec 2024Reviewer(s) Assigned