A low-distortion bootstrapped switch based on parasitic capacitance
reduction techniques
Abstract
This letter presents a low-distortion bootstrapped switch for improving
sampling network linearity. The dynamically driven gate approach and the
dynamically driven DNW (Deep N-well) technique are proposed to reduce
the parasitic capacitance at crucial nodes. Simulated in a 180nm CMOS
process, the proposed switch achieves a total harmonic distortion (THD)
of -102.1dB at an 80MHz sampling frequency. This is an 21.4dB increase
in THD, over the conventional switch.