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Modeling Single Event Transient in 28nm FDSOI MOSFETs Using a Neural Network Approach
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  • Jiaxin Chen,
  • Ting Xu,
  • Xinyi Zhang,
  • Bo Li,
  • Lei Wang,
  • Jianhui Bu
Jiaxin Chen
Chinese Academy of Sciences Institute of Microelectronics
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Ting Xu
Chinese Academy of Sciences Institute of Microelectronics
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Xinyi Zhang
Chinese Academy of Sciences Institute of Microelectronics
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Bo Li
Chinese Academy of Sciences Institute of Microelectronics
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Lei Wang
Chinese Academy of Sciences Institute of Microelectronics
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Jianhui Bu
Chinese Academy of Sciences Institute of Microelectronics

Corresponding Author:bujianhui@ime.ac.cn

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Abstract

It’s hard to accurately consider various operating factors for the traditional single event transient (SET) SPICE modeling. This paper proposes a novel method based on neural network. The proposed method can unify the intricate data correlations among drain voltage, linear energy transfer (LET), temperature, strike position, time, and drain transient current in a single model with high accuracy. Technology computer aided design (TCAD) simulation is used to get the original SET data for training. The genetic algorithm (GA) optimized back propagation (BP) neural network established herein has a root mean square error (RMSE) of less than 2.0042%. This optimized neural network is converted to SET current SPICE model through Verilog-A language and its practicality has been verified through circuit simulation of a two-input NAND gate.
05 Dec 2024Submitted to International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
05 Dec 2024Submission Checks Completed
05 Dec 2024Assigned to Editor
05 Dec 2024Review(s) Completed, Editorial Evaluation Pending
06 Dec 2024Reviewer(s) Assigned