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Demonstration of a simple and efficient design methodology for high-voltage floating field limiting ring in SiC power devices
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  • Zhang Bingke,
  • Bo Yi,
  • Hang Zhou,
  • Huan Ge,
  • Rui Jin,
  • Tao Zhu
Zhang Bingke
Beijing Instiute of Smart Energy
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Bo Yi
University of Electronic Science and Technology of China
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Hang Zhou
Beijing Instiute of Smart Energy
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Huan Ge
Beijing Instiute of Smart Energy
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Rui Jin
Beijing Instiute of Smart Energy
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Tao Zhu
Beijing Instiute of Smart Energy

Corresponding Author:zhutao540611@126.com

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Abstract

In this letter, we proposed and experimentally demonstrated a simple and efficient design method for high-voltage Floating Field Ring (FFR). Three floating FFRs is firstly used to determine the influence of rings’ distance (d) on the voltage drops of the highest voltage to second ring (Vn+1) and the second to the first ring (Vn). Then, two voltage curves (curve for Vn+1 and Vn) based on d are drawn. Then, for a target breakdown voltage, by iteration between the curves for Vn+1 and Vn, number of FFRs and corresponding distances can be found. Based on this method, an 8.0 kV PN diode with 110 FFRs is designed and fabricated. The measured breakdown voltage is 7840 V, which reaches 93% of the designed value. This method provides a simple and efficient design for high-voltage SiC devices, especially for ultra-high voltage applications where the number of rings exceeds dozens.
20 Nov 2023Submitted to Electronics Letters
24 Jan 20241st Revision Received
31 Jan 2024Review(s) Completed, Editorial Evaluation Pending
03 Mar 2024Reviewer(s) Assigned
24 Mar 2024Editorial Decision: Accept