Nowadays, the copper nitride (Cu ₃N) is of great interest as a new solar absorber material, flexible and lightweight thin film solar cells. This material is a metastable semiconductor, non-toxic, composed of earth-abundant elements, and its band gap energy can be easily tunable in the range 1.4 to 1.8 eV. For this reason, it has been proposed for many applications in the solar energy conversion field. The main aim of this work is to evaluate the properties of the Cu ₃N thin films fabricated by reactive radio-frequency (RF) magnetron sputtering at different RF power values to determine its potential as light absorber. The Cu ₃N films were fabricated at room temperature (RT) from a Cu metallic target at the RF power ranged from 25 to 200 W on different substrates (silicon and glass). The pure nitrogen flux was set to 20 sccm, and the working pressures were set to 3.5 Pa and 5 Pa. The XRD results showed a transition from (100) to (111) preferred orientations when RF power increased; the AFM images revealed a granular morphology, while FTIR and Raman spectra exhibited the characteristics peaks related to Cu-N bonds, which became narrower when the RF power increased. Finally, to stablish the suitability of these films as absorber, the band gap energy was calculated from transmission spectra.