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A large memory window and low power consumption self-rectifying memristor for electronic synapse
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  • Qingjiang Li,
  • Shihao Yu,
  • Peng Yang,
  • Qin Wang,
  • Sen Liu
Qingjiang Li
National University of Defense Technology

Corresponding Author:qingjiangli@nudt.edu.cn

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Shihao Yu
National University of Defense Technology
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Peng Yang
National University of Defense Technology
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Qin Wang
National University of Defense Technology
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Sen Liu
National University of Defense Technology
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Abstract

Self-rectifying memristor has no need for selector devices, but possess the one-way transmission behavior and multi-level non-volatile memory characteristics, which makes it promising candidate for electronic synapse. In this letter, we propose a novel self-rectifying memristor based on Pt/Hf0.5Zr0.5O2/TiN structure. The devices show large memory window (104) and high rectifying ratio (104), which can block the sneak current in passive crossbar array without any additional hardware overhead. Moreover, the devices demonstrate excellent multi-level states modulation capability, low power consumption, high endurance and long retention. The final benchmark demonstrates that the proposed Pt/Hf0.5Zr0.5O2/TiN self-rectifying memristor is a promising candidate for electronic synapse application.
24 Aug 2022Submitted to Electronics Letters
24 Aug 2022Submission Checks Completed
24 Aug 2022Assigned to Editor
19 Sep 2022Reviewer(s) Assigned
27 Oct 2022Review(s) Completed, Editorial Evaluation Pending
27 Nov 2022Editorial Decision: Revise Minor
02 Dec 20221st Revision Received
02 Dec 2022Submission Checks Completed
02 Dec 2022Assigned to Editor
02 Dec 2022Review(s) Completed, Editorial Evaluation Pending
19 Dec 2022Editorial Decision: Accept